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2N7002M - MOSFET

Datasheet Details

Part number 2N7002M
Manufacturer Jiangsu Changjiang Electronics
File Size 280.31 KB
Description MOSFET
Datasheet download datasheet 2N7002M Datasheet

General Description

High cell density, DMOS technology.

These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.

They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A.

Overview

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate.

Key Features

  • High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability.